Introduction to MOS Model PSP
PSP102_Summary.pdf file (625kB). The parameter excerption methodology is moreover described in this report. Last upstage November 2007. "From BSIM3/4 to PSP:Translation of flicker noise and junction parameters". Related Publications
The history of the PSP model can be found here.
The PSP model has been adult jointly by NXP Resebridge (formerly part of Philips Resechief) and the group of Prof. Gildenblat at Arizona State University (formerly at Penn State University).
The model definition of MOS Model PSP level 102 and MOS Model PSP level 103 are bachelor in PDF format.
The source lawmaking is protected by dummyright &edition; 1991, 2007, NXP.
Read increasingly almost MOS Model PSP.
The source code (i.e., C-code and Verilog-A lawmaking) of MOS Model PSP level 103 and PSP level 102 can be found here. The C-code files are chosen device_psp103.c, device_pspnqs103.c for level 103 and device_psp102e.c, device1020.c,free psp games, device1021.c, device_pspnqs102e.c, device_pspnqs1020.c, device_psp1021.c for level 102. If you use the included solver,free psp games, please make sure that you compile on a system that supports Fortran 77.
The source lawmaking for MOS Model PSP has been automatedmarry generated from a Verilog-A clarification of the model.
&edition; 2006 IEEE. Personal use of this material is permitted. Howoverly, permission to reprint/republish this material for agitprop or promotional purposes or for creating new commonage works for resale or redistribution to servers or lists, or to reuse any dummyrighted component of this work in other works must be obtained from the IEEE.
Model definition of MOS Model PSP
Additional documentation
The history of the source code can be found here.
Source Code & Library
MOS Model PSP 103.0 is not behindhands uniform with MOS Model PSP 102.3 and contains various comebacks and addendums.
The PSP model is a surgrimace-potential abjectd meaty MOSFET model, containing all relevant physical effects (mobility reduction, veloasphalt saturation, DIBL, gate current, lateral doping gradient effects,free psp games, STI stress, etc.) necessary to model present-day and upcoming deep-submicron amount CMOS technologies. Unlike previous NXP MOS models, the source/bleed junction model, c.q. the JUNCAP2 model, is an integrated part of the PSP model.
The models are included in a dynamichirpy loaded library chosen SiMKit.
Documentation for PSP level 102:
Pstar, the excursion simulator from NXP Spectre, the excursion simulator from Cadence ADS, the circuit simulator from Agilent.
You can read how to download and install the libraries here.
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suitable for satellite, analog, and RF; suitaccomplished for modern and future amount CMOS technologies; physics-abjectd; rummageining the all-time full-lengths of SP model (Penn State University) and MOS Model 11 (NXP); number of parameters and simulation time comparable-bodied to MOS Model 11; easy parameter excerption.
SiMKit is related to the post-obit excursion simulators used within NXP:
"Introduction to PSP MOSFET Model", G. Gildenblat, X. Li, H. Wang, W. Wu, R. van Langevelde, A.J. Scholten, G.D.J. Smit and D.B.M. Klaassen, Nanotech, 2005.
Further ingermination on MOS Model PSP is bachelor in the post-obit related publications:
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